3sk41 - Datasheet

Providing stable, high-frequency oscillations. 6. Alternatives and Equivalents

: Optimized for rapid on/off transitions, it’s ideal for demanding switch-mode power supplies (SMPS) and high-frequency oscillators. Energy Efficient : It features a low

The 3SK40 is reported to have identical DC and RF specifications and is sometimes used as a direct substitute. The 3SK45 is also very similar, but slight differences in gain or capacitance may require minor circuit adjustments. The 3N201 (also known as MFE201 ) has been used successfully by hobbyists, but care is required when selecting a vendor to avoid counterfeit parts.

When working with this component, always employ anti-static wrist straps, grounded soldering irons, and handle the component strictly by its metal casing rather than its long pins. Ensure operating environments do not breach its specified thermal ceiling to safeguard continuous performance. 3SK41 Cross-Reference & Modern Equivalents 3sk41 datasheet

| Parameter | Condition | Min | Typ | Max | Unit | | :--- | :--- | :--- | :--- | :--- | :--- | | | VDS=10V, VG1S=0, VG2S=0 | 5 | 15 | 25 | mA | | Gate-Source Cutoff Voltage | VDS=10V, ID=100µA | -0.5 | -1.5 | -3.0 | V | | Forward Transfer Admittance (|Yfs|) | VDS=10V, ID=10mA, f=1kHz | 12 | 20 | 30 | mS | | Input Capacitance (Ciss) | VDS=10V, f=1MHz | - | 3.5 | 5.0 | pF | | Reverse Transfer Capacitance (Crss) | VDS=10V, f=1MHz | - | 0.03 | 0.1 | pF | | Output Capacitance (Coss) | VDS=10V, f=1MHz | - | 2.0 | 3.0 | pF | | Noise Figure (NF) | f=200MHz, VG2S=4V | - | 3.0 | 5.0 | dB | | Power Gain (Gps) | f=200MHz, VG2S=4V | 18 | 22 | - | dB |

Exceeding these ratings, even momentarily, will destroy the device.

The 3SK41 was specifically intended for use in , where its low noise figure and high input impedance were critical for achieving good sensitivity in FM tuners and other RF front‑ends. It was part of a family of Japanese dual‑gate MOSFETs, with the “3S” prefix indicating a four‑lead, single‑ended, high‑frequency device. Providing stable, high-frequency oscillations

Crucial for selecting and converting television and radio broadcast frequencies. Oscillators:

Unlike standard three-terminal field-effect transistors, the dual-gate architecture necessitates a four-lead layout:

This public link is valid for 7 days and shares a thread, including any personal information you added. This link or copies made by others cannot be deleted. If you share with third parties, their policies apply. Can’t copy the link right now. Try again later. 3SK41 NEC/HITACHI/MOTOROLA IC Chips | Censtry Energy Efficient : It features a low The

The 3SK41 is engineered to handle low-noise, high-gain amplification in the very high frequency (VHF) and ultra-high frequency (UHF) spectrums. Because it utilizes a dual-gate architecture, it provides superior automatic gain control (AGC) characteristics and excellent isolation between the input and output stages.

: This allowed for better control and gain, making it ideal for RF (radio frequency) amplification. Fast Switching : Its low

is a specialized N-channel silicon dual-gate MOSFET primarily used for high-frequency applications like VHF/UHF amplifiers and mixers. Often manufactured by companies like